IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING

被引：15

作者：

ISHIKAWA, T

OGASAWARA, K

NAKAMURA, T

KURODA, S

KONDO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1937 / 1940

页数：4

共 10 条

[1] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE
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[2] A MICROWAVE-POWER DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTOR
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[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 341 - 343
[3] A NEW HETEROSTRUCTURE FOR 2DEG SYSTEM WITH A SI ATOMIC-PLANAR-DOPED ALAS-GAAS-ALAS QUANTUM WELL STRUCTURE GROWN BY MBE
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ISHIKAWA, T
KONDO, K
ISHIKAWA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L431 - L433
[4] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
FUJII, T
MIMURA, T
NANBU, K
SAITO, J
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458
[5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
INOUE, K
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
[7] KURODA S, 1984, IEEE GAAS IC S, P125
[8] LEE H, 1985, I PHYS C SER, V74, P321
[9] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY
SASA, S
MUTO, S
KONDO, K
ISHIKAWA, H
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L602 - L604
[10] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS
WOOD, CEC
METZE, G
BERRY, J
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 383 - 387

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