A NEW HETEROSTRUCTURE FOR 2DEG SYSTEM WITH A SI ATOMIC-PLANAR-DOPED ALAS-GAAS-ALAS QUANTUM WELL STRUCTURE GROWN BY MBE

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[3] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[5] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[6] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[7] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[8] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353

[9] Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[3] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[5] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[6] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[7] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319

[8] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 351 - 353

[9] Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532