HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FROM DELTA-DOPED ASYMMETRIC ALXGA1-XAS/GAAS/ALYGA1-YAS QUANTUM-WELLS

[1] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[2] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 71 - 74

[3] NEW HIGH-SPEED III-V DEVICES FOR INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1662 - 1667

[4] INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K [J]. ELECTRONICS LETTERS, 1983, 19 (19) : 789 - 791

[5] A NEW HETEROSTRUCTURE FOR 2DEG SYSTEM WITH A SI ATOMIC-PLANAR-DOPED ALAS-GAAS-ALAS QUANTUM WELL STRUCTURE GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L431 - L433

[6] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[7] MIMURA T, 1983, 1983 IEDM, P99

[8] Ohata K., 1984, 1984 IEEE MTT-S International Microwave Symposium Digest. Expanding Microwave Horizons (Cat. No. 84CH2034-7), P434

[9] OKAMOTO H, 1985, MICROELECTRON ENG, V2, P44

[10] PLOOG K, 1985, 2ND INT C MOD SEM ST, P69

[1] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[2] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 71 - 74

[3] NEW HIGH-SPEED III-V DEVICES FOR INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1662 - 1667

[4] INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K [J]. ELECTRONICS LETTERS, 1983, 19 (19) : 789 - 791

[5] A NEW HETEROSTRUCTURE FOR 2DEG SYSTEM WITH A SI ATOMIC-PLANAR-DOPED ALAS-GAAS-ALAS QUANTUM WELL STRUCTURE GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L431 - L433

[6] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[7] MIMURA T, 1983, 1983 IEDM, P99

[8] Ohata K., 1984, 1984 IEEE MTT-S International Microwave Symposium Digest. Expanding Microwave Horizons (Cat. No. 84CH2034-7), P434

[9] OKAMOTO H, 1985, MICROELECTRON ENG, V2, P44

[10] PLOOG K, 1985, 2ND INT C MOD SEM ST, P69