INSTABILITIES IN MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFETS) AT 77-K

被引：22

作者：

FISCHER, R

DRUMMOND, TJ

KOPP, W

MORKOC, H

LEE, K

SHUR, MS

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 19期

关键词：

D O I：

10.1049/el:19830538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：789 / 791

页数：3

共 14 条

[1] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R ;

MORKOC, H ;

THORNE, RE ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240

[2] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[3] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J].

DRUMMOND, TJ ;

FISCHER, R ;

SU, SL ;

LYONS, WG ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :262-264

[4]

DRUMMOND TJ, 1982, ELECTRON LETT, V18, P794

[5] FIELD-INDUCED REEMISSION OF ELECTRONS TRAPPED IN SIO2 [J].

FORBES, L ;

SUN, E ;

ALDERS, R ;

MOLL, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1816-1818

[6] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[7] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS [J].

LEE, K ;

SHUR, MS ;

DRUMMOND, TJ ;

SU, SL ;

LYONS, WG ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :186-189

[8] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS [J].

LEE, K ;

SHUR, M ;

DRUMMOND, TJ ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2093-2096

[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

JOSHIN, K ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[10] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

FISCHER, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

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