Crystal growth at high pressure and the problem of characterization of the interstitial phases in the B-C-O system

被引：10

作者：

Gladkaya, IS ^{[1
]}

Dyuzheva, TI ^{[1
]}

Ekimov, EA ^{[1
]}

Nikolaev, NA ^{[1
]}

Bendeliani, NA ^{[1
]}

机构：

[1] Russian Acad Sci, LF Vereschagin Inst High Pressure Phys, Troitsk 142190, Moskovskaya Obl, Russia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2001年 / 329卷 / 1-2期

基金：

俄罗斯科学基金会;

关键词：

oxide materials; crystal growth; crystal structure; X-ray diffraction high pressure;

D O I：

10.1016/S0925-8388(01)01612-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Different crystal growth methods were used to obtain single crystals of interstitial phases based on the alpha -boron structure in the B-O and B-C-O systems at pressures of 3-7 GPa. and temperatures of 1500-2000 K. Boron suboxide carbide B(C,O)(0.16) crystals with sizes up to 250 mum, suitable for complete structure analysis, were prepared by chemical reaction between B4C and B2O3 (molar ratio 1:1). The hexagonal unit cell parameters of the B(C,O)(0.16) compound are: a = 5.618(1) Angstrom, c = 12.122(1) Angstrom, c/a = 2.158, Z = 38.54 and space group R (3) over barm. The analytical method for estimation of the chemical composition and the number of atoms per unit cell is presented for this kind of compound. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：153 / 156

页数：4

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