To the theory of semiconductor gas sensors

被引：21

作者：

Aroutiounian, VM ^{[1
]}

Aghababian, GS ^{[1
]}

机构：

[1] Yerevan State Univ, Dept Phys Semicond, Yerevan 375049, Armenia

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 50卷 / 01期

关键词：

gas adsorption; surface conductivity; semiconductor gas sensor;

D O I：

10.1016/S0925-4005(98)00159-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Physical processes in semiconductor gas sensors and dependencies of the surface potential and concentration of charge carriers in the space charge region (SCR) of a semiconductor on the gas pressure contacting with a gas, are investigated. Corresponding sub-linear dependencies of the concentration of carriers on the pressure of an adsorbed gas are obtained in usual Langmuirian case and in the case when adsorption leads to a reduction in the heat of adsorption due to a charging of the semiconductor surface. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：80 / 84

页数：5

共 15 条

[1] On the theory of the adsorption of a gas on a semiconductor
Aroutiounian, VM
Aghababian, GS
[J]. SURFACE REVIEW AND LETTERS, 1997, 4 (05) : 1059 - 1061
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[5] AROUTIOUNIAN VM, 1993, EUROSENSORS, V7, P123
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[7] BUTURLIN AI, 1983, ELECT TECHNICS, V10, P3
[8] ACCUMULATION LAYER MODEL FOR GA(2)O(3) THIN-FILM GAS SENSORS BASED ON THE VOLKENSTEIN THEORY OF CATALYSIS
GEISTLINGER, H
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1994, 18 (1-3) : 125 - 131
[9] ELECTRON THEORY OF THIN-FILM GAS SENSORS
GEISTLINGER, H
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1993, 17 (01) : 47 - 60
[10] GOTO KS, 1988, MAT SCI MONOGRAPHS, V49, P341

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