Pixelless imaging device using optical up-converter

被引：30

作者：

Luo, H ^{[1
]}

Ban, D ^{[1
]}

Liu, HC ^{[1
]}

Poole, PJ ^{[1
]}

Buchanan, M ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

charge coupled devices (CCDs); image converters; infrared detectors; infrared image sensors; infrared imaging; light-emitting diodes (LEDs); optical frequency conversion; pixelless imaging;

D O I：

10.1109/LED.2004.824245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pixelless imaging device based on optical wavelength conversion was designed and fabricated. The up-converter consisted of an integrated InGaAs/InP PIN photodetector and an InGaAsP/InP light-emitting diode (LED) epitaxially grown on a single InP substrate. Incoming 1.5 mum optical radiation was absorbed by the p-i-n detector and generated a photocurrent. The resultant photocurrent was used to bias the LED that emitted at 1 mum, which could be detected by conventional silicon charge coupled device. Pixelless imaging by the device has been demonstrated at room temperature.

引用

页码：129 / 131

页数：3

共 15 条

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