1.5 to 0.87 μm optical upconversion device fabricated by wafer fusion

被引：25

作者：

Ban, D

Luo, H

Liu, HC

SpringThorpe, AJ

Glew, R

Wasilewski, ZR

Buchanan, M

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Bookham Technol, Ottawa, ON K2H 5A2, Canada

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

D O I：

10.1049/el:20030732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.5 to 0.87 mum wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.

引用

页码：1145 / 1147

页数：3

共 15 条

[1] Impact of planar microcavity effects on light extraction - Part II: Selected exact simulations and role of photon recycling
Benisty, H
De Neve, H
Weisbuch, C
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) : 1632 - 1643
[2] High differential efficiency (>16%) quantum dot microcavity light emitting diode
Chen, H
Zou, Z
Cao, C
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (03) : 350 - 352
[3] Pixelless thermal Imaging with integrated quantum-well infrared photodetector and light-emitting diode
Dupont, E
Byloos, M
Gao, M
Buchanan, M
Song, CY
Wasilewski, ZR
Liu, HC
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (02) : 182 - 184
[4] Efficient light emitting diodes by photon recycling and their application in pixelless infrared imaging devices
Dupont, E
Chiu, S
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 1023 - 1028
[5] Wafer-fused p-i-n InGaAs/Si photodiode with photogain
Kang, Y
Mages, P
Clawson, AR
Lau, SS
Lo, YH
Yu, PKL
Pauchard, A
Zhu, Z
Zhou, Y
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (07) : 970 - 972
[6] Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C
Karim, A
Abraham, P
Lofgreen, D
Chiu, YJ
Piprek, J
Bowers, J
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2632 - 2633
[7] SOLID-STATE INFRARED-WAVELENGTH CONVERTER EMPLOYING HIGH-QUANTUM-EFFICIENCY GE-GAAS HETEROJUNCTION
KRUSE, PW
PRIBBLE, FC
SCHULZE, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1718 - &
[8] Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
Levine, BF
Pinzone, CJ
Hui, S
King, CA
Leibenguth, RE
Zolnowski, DR
Lang, DV
Krautter, HW
Geva, M
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2141 - 2143
[9] 1.5 μm up-conversion device
Liu, HC
Gao, M
Poole, PJ
[J]. ELECTRONICS LETTERS, 2000, 36 (15) : 1300 - 1301
[10] INTEGRATED QUANTUM-WELL INTERSUB-BAND PHOTODETECTOR AND LIGHT-EMITTING DIODE
LIU, HC
LI, J
WASILEWSKI, ZR
BUCHANAN, M
[J]. ELECTRONICS LETTERS, 1995, 31 (10) : 832 - 833

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