1.5 to 0.87 μm optical upconversion device fabricated by wafer fusion

被引:25
作者
Ban, D
Luo, H
Liu, HC
SpringThorpe, AJ
Glew, R
Wasilewski, ZR
Buchanan, M
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Bookham Technol, Ottawa, ON K2H 5A2, Canada
关键词
D O I
10.1049/el:20030732
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.5 to 0.87 mum wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.
引用
收藏
页码:1145 / 1147
页数:3
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