Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C

被引:42
作者
Karim, A [1 ]
Abraham, P [1 ]
Lofgreen, D [1 ]
Chiu, YJ [1 ]
Piprek, J [1 ]
Bowers, J [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1368377
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report 105 degreesC continuous-wave, electrically pumped operation of a 1526 nm vertical-cavity surface-emitting laser. An InP/InGaAsP active region was wafer bonded to GaAs/AlGaAs mirrors, with a superlattice barrier to reduce the number of nonradiative recombination centers in the bonded active region. (C) 2001 American Institute of Physics.
引用
收藏
页码:2632 / 2633
页数:2
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