Superlattice barrier 1528-nm vertical-cavity laser with 85 °C continuous-wave operation

被引：30

作者：

Karim, A ^{[1
]}

Black, KA ^{[1
]}

Abraham, P ^{[1
]}

Lofgreen, D ^{[1
]}

Chiu, YJ ^{[1
]}

Piprek, J ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 11期

关键词：

semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs); wafer bonding;

D O I：

10.1109/68.887642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report 85 degreesC continuous-wave electrically pumped operation of a 1528-nm vertical-cavity laser. An InP-In-GaAsP active region was wafer bonded to GaAs-AlGaAs mirrors, with a superlattice barrier to reduce defect density in the active region.

引用

页码：1438 / 1440

页数：3

共 11 条

[1] Black K. A., 1999, P 11 INT C IND PHOSP, P357
[2] BLACK KA, 1999, P 11 INT C IPRM, P271
[3] 1-mW CW-RT monolithic VCSEL at 1.55 μm
Boucart, J
Starck, C
Gaborit, F
Plais, A
Bouché, N
Derouin, E
Goldstein, L
Fortin, C
Carpentier, D
Salet, P
Brillouet, F
Jacquet, J
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (06) : 629 - 631
[4] Electrically-pumped, single-epitaxial VCSELs at 1.55μm with Sb-based mirrors
Hall, E
Almuneau, G
Kim, JK
Sjölund, O
Kroemer, H
Coldren, LA
[J]. ELECTRONICS LETTERS, 1999, 35 (16) : 1337 - 1338
[5] JAYARAMAN V, 1999, P LEOS SUMM TOP, V3, P19
[6] High-temperature optically pumped 1.55-μm VCSEL operating at 6 Gb/s
Keating, A
Black, A
Karim, A
Chiu, YJ
Abraham, P
Harder, C
Hu, E
Bowers, J
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 116 - 118
[7] Room-temperature, electrically-pumped multiple-active-region VCSELs with high differential efficiency at 1.55μm
Kim, JK
Hall, E
Sjölund, O
Almuneau, G
Coldren, LA
[J]. ELECTRONICS LETTERS, 1999, 35 (13) : 1084 - 1085
[8] Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency
Ortsiefer, M
Shau, R
Böhm, G
Köhler, F
Amann, MC
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2179 - 2181
[9] PIPREK J, 1997, P LEOS ANN M, V2, P428
[10] Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of <500A/cm2
Qian, Y
Zhu, ZH
Lo, YH
Huffaker, DL
Deppe, DG
Hou, HQ
Hammons, BE
Lin, W
Tu, YK
[J]. ELECTRONICS LETTERS, 1997, 33 (12) : 1052 - 1054

← 1 2 →