1-mW CW-RT monolithic VCSEL at 1.55 μm

被引：53

作者：

Boucart, J ^{[1
]}

Starck, C ^{[1
]}

Gaborit, F ^{[1
]}

Plais, A ^{[1
]}

Bouché, N ^{[1
]}

Derouin, E ^{[1
]}

Goldstein, L ^{[1
]}

Fortin, C ^{[1
]}

Carpentier, D ^{[1
]}

Salet, P ^{[1
]}

Brillouet, F ^{[1
]}

Jacquet, J ^{[1
]}

机构：

[1] Alcatel Corp Res Ctr, OPTO Plus, F-91460 Marcoussis, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 06期

关键词：

metamorphic; monolithic; tunnel junction; VCSEL;

D O I：

10.1109/68.766766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 mu m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity, The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.

引用

页码：629 / 631

页数：3

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