Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.31μm vertical-cavity lasers

被引：18

作者：

Salet, P ^{[1
]}

Pagnod-Rossiaux, P ^{[1
]}

Gaborit, F ^{[1
]}

Plais, A ^{[1
]}

Jacquet, J ^{[1
]}

机构：

[1] Alcatel Alsthom Rech, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 13期

关键词：

vertical cavity surface emitting lasers; molecular beam epitaxial growth;

D O I：

10.1049/el:19970762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly reflective InGaAsP/InP Bragg mirror is reported for the first time at 1.3 mu m. The control of both layer compositions and thicknesses over 2in wafers in the gas-source molecular-beam epitaxy equipment has enabled the realisation of such a mirror. An absolute reflectivity of 99.6% using a VW technique was recorded on a Pt/Au metallised 40-period mirror.

引用

页码：1145 / 1147

页数：3

共 3 条

[1] THRESHOLD REDUCTION OF 1.3 MU-M GAINASP INP SURFACE-EMITTING LASER BY A MASKLESS CIRCULAR PLANAR BURIED HETEROSTRUCTURE REGROWTH [J].