InP-based 1.5μm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

被引：14

作者：

Gebretsadik, H ^{[1
]}

Bhattacharya, PK

Kamath, KK

Qasaimeh, OR

Klotzkin, DJ

Caneau, C

Bhat, R

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Corning Inc, Redbank, NJ 07701 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980919

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature pulsed operation of a novel 1.5 mu m vertical cavity surface emitting laser is reported. A GaAs/Al0.95Ga0.05As heterostructure is grown directly on the patterned InGaAsP/InP quantum well active region. Selective lateral oxidation of a lattice matched In0.52Al0.48As layer is used for current confinement and, to create the top AlxOy/GaAs distributed Bragg reflector. The minimum threshold current is 12mA.

引用

页码：1316 / 1318

页数：3

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