GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs

被引：37

作者：

Goldstein, L

Fortin, C

Starck, C

Plais, A

Jacquet, J

Boucart, J

Rocher, A

Poussou, C

机构：

[1] Alcatel Alsthom Rech, F-91460 Marcoussis, France

[2] CNRS, CEMES, F-31055 Toulouse, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 03期

关键词：

D O I：

10.1049/el:19980117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high reflectivity GaAs/AlGaAs Bragg mirror (> 99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic material do not propagate to the active layer. The metamorphic mirror offers a promising alternative to wafer fusion for long wavelength surface-emitting lasers.

引用

页码：268 / 270

页数：3

共 7 条

[1]

ALMUNEAU G, 1997, IEEE LEOS SUMM TOP M

[2]

DIAS IFL, 1997, LECT LETT, V33, P716

[3]

GOLDSTEIN L, 1997, IEEE LEOS SUMM TOP M

[4] Submilliamp long wavelength vertical cavity lasers [J].