Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at -30 nm gain offset

被引:66
作者
Piprek, J [1 ]
Akulova, YA [1 ]
Babic, DI [1 ]
Coldren, LA [1 ]
Bowers, JE [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.121318
中图分类号
O59 [应用物理学];
学科分类号
摘要
Double-fused vertical-cavity surface-emitting lasers (VCSELs) have demonstrated the highest temperature performance of any 1.5 mu m VCSEL, but further optimization is needed to reduce their temperature sensitivity, We present and analyze threshold current measurements of these devices between -90 degrees C and 30 degrees C stage temperature, Despite a zero gain peak offset from the emission wavelength at room temperature, the pulsed threshold current has its minimum near -50 degrees C corresponding to about -30 nm gain offset, This is in contrast to a common VCSEL design rule. Temperature effects on the optical gain of the strain-compensated InGaAsP/InP active region are found to be the main cause for the disagreement. A design rule modification is proposed. Numerical simulation of an optimized 1.55 mu m VCSEL shows that gain offset improvements are counteracted by loss mechanisms, (C) 1998 American Institute of Physics.
引用
收藏
页码:1814 / 1816
页数:3
相关论文
共 18 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS
    BABIC, DI
    STREUBLE, K
    MIRIN, RP
    MARGALIT, NM
    BOWERS, JE
    HU, EL
    MARS, DE
    YANG, L
    CAREY, K
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) : 1225 - 1227
  • [3] BABIC DI, 1997, IEEE J QUANTUM ELECT, V33, P1139
  • [4] CHOQUETTE KD, 1997, P SPIE, V3003
  • [5] MANY-BODY EFFECTS IN THE TEMPERATURE-DEPENDENCE OF THRESHOLD IN A VERTICAL-CAVITY SURFACE-EMITTING LASER
    CHOW, WW
    CORZINE, SW
    YOUNG, DB
    COLDREN, LA
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2460 - 2462
  • [6] EFFICIENT BAND-STRUCTURE CALCULATIONS OF STRAINED QUANTUM-WELLS
    CHUANG, SL
    [J]. PHYSICAL REVIEW B, 1991, 43 (12): : 9649 - 9661
  • [7] Coldren L. A., 2012, DIODE LASERS PHOTONI, V218
  • [8] HIGH-TEMPERATURE PULSED AND CONTINUOUS-WAVE OPERATION AND THERMALLY STABLE THRESHOLD CHARACTERISTICS OF VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    LU, B
    ZHOU, P
    CHENG, JL
    MALLOY, KJ
    ZOLPER, JC
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1337 - 1339
  • [9] Temperature dependence of the threshold current in gain-coupled distributed feedback lasers with periodically etched quantum wells: Mechanism for an appearance of infinite T-0
    Makino, T
    Lu, H
    Evans, JD
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1892 - 1894
  • [10] MARGALIT NM, 1997, IEEE J SEL TOP QUANT, V3, P395