Metastability studies in silicon thin films: from short range ordered to medium and long range ordered materials

被引:31
作者
St'ahel, P [1 ]
Hamma, S
Sladek, P
Cabarrocas, PRI
机构
[1] Ecole Polytech, UPR 258 CNRS, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France
[2] Masaryk Univ, PDF, Dept Phys, CZ-60300 Brno, Czech Republic
关键词
metastability; microcrystalline Si; a-Si; thin film;
D O I
10.1016/S0022-3093(98)00269-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of disorder on the kinetics of creation of metastable defects on silicon thin films have been studied through the evolution of the dark conductivity, the photoconductivity and the subgap absorption. Hydrogenated amorphous silicon, representative of short range ordered materials has been compared to polymorphous silicon (medium range order) and to microcrystalline silicon (long range order). Changing from short range ordered to medium range ordered materials results in a faster kinetics of creation of metastable defects as well as to films with better properties in both as-deposited and light-soaked states. Microcrystalline silicon films with crystalline fractions above 60% present stability and an improvement of their properties during light-soaking. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:276 / 280
页数:5
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