Antiferromagnetic metallic state in the heavily doped region of perovskite manganites

被引:126
作者
Moritomo, Y
Akimoto, T
Nakamura, A
Ohoyama, K
Ohashi, M
机构
[1] Nagoya Univ, CIRSE, Nagoya, Aichi 46401, Japan
[2] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan
关键词
D O I
10.1103/PhysRevB.58.5544
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Comprehensive study on electronic and magnetic properties has been performed for doped manganite near the phase boundary of the antiferromagnetic metallic (AFM) state, with changing the nominal hole concentration x and the one-electron bandwidth W. In La1 - xSrxMnO3 with maximal W, the ferromagnetic metallic ground state in the low-x region is replaced by the AFM state beyond x = 0.54. On the other hand, the charge-ordered insulating (COI) state appears at x similar to 0.5 for Nd1 - xSrxMnOx with reduced W. The COI ground state is overwhelmed by the AFM state with further increasing x (greater than or equal to 0.54) or W. These competitions of the AFM state with the alternative ground states suggest that the AEM state is a fundamental ground state for doped manganites.
引用
收藏
页码:5544 / 5549
页数:6
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