Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems

被引:11
作者
Lei, XL [1 ]
Cao, JC [1 ]
Dong, B [1 ]
机构
[1] CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA
关键词
D O I
10.1063/1.363024
中图分类号
O59 [应用物理学];
学科分类号
摘要
Balance equations for high-field electron transport in nonparabolic multiband (multivalley) semiconductors are proposed based on the Heisenberg equations of motion for the total physical momentum, the total energy and the population of carriers in each energy band (each valley), and the statistical average with respect to an initial density matrix having a lattice wave-vector shift, an electron temperature, and a chemical potential for each energy band (each valley) as parameters. As an example, these equations are applied to the discussion of hot-electron transport in bulk Si, assuming Kane-type energy dispersion for six elliptical valleys. The theoretical results are in good agreement with experiments and with Monte Carlo simulations, over the entire range of the electric field up to 140 kV/cm. (C) 1996 American Institute of Physics.
引用
收藏
页码:1504 / 1509
页数:6
相关论文
共 29 条
[1]  
BORDELON TJ, 90353 IEDM
[2]   TRAVELING DIPOLE DOMAINS AND FLUCTUATIONS FOR A CURRENT INSTABILITY DUE TO BRAGG SCATTERING [J].
BUTTIKER, M ;
THOMAS, H .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :95-101
[3]   CURRENT INSTABILITY AND DOMAIN PROPAGATION DUE TO BRAGG SCATTERING [J].
BUTTIKER, M ;
THOMAS, H .
PHYSICAL REVIEW LETTERS, 1977, 38 (02) :78-80
[4]   ELECTRON DRIFT VELOCITY IN SILICON [J].
CANALI, C ;
JACOBONI, C ;
NAVA, F ;
OTTAVIANI, G ;
ALBERIGIQUARANTA, A .
PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284
[5]   DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].
CANALI, C ;
OTTAVIANI, G ;
ALBERIGI.A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+
[6]  
CANALI C, 1985, HOT ELECTRON TRANSPO, P87
[7]   HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].
CONWELL, EM ;
VASSELL, MO .
PHYSICAL REVIEW, 1968, 166 (03) :797-+
[8]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[9]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[10]   DISTRIBUTION-FUNCTIONS AND BALANCE-EQUATIONS OF DRIFTING BLOCH ELECTRONS IN AN ELECTRIC-FIELD - REPLY [J].
HUANG, K ;
WU, XG .
PHYSICAL REVIEW B, 1995, 51 (08) :5531-5531