Central safety factor and βN control on NSTX-U via beam power and plasma boundary shape modification, using TRANSP for closed loop simulations

被引：25

作者：

Boyer, M. D. ^{[1
]}

Andre, R. ^{[1
]}

Gates, D. A. ^{[1
]}

Gerhardt, S. ^{[1
]}

Goumiri, I. R. ^{[2
]}

Menard, J. ^{[1
]}

机构：

[1] Princeton Plasma Phys Lab, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA

来源：

NUCLEAR FUSION | 2015年 / 55卷 / 05期

关键词：

spherical torus plasma control; current profile control; optimal control; control-oriented modelling; PROFILE CONTROL; ASPECT-RATIO; CONDUCTIVITY; CONFINEMENT; STABILITY;

D O I：

10.1088/0029-5515/55/5/053033

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The high-performance operational goals of NSTX-U will require development of advanced feedback control algorithms, including control of beta(N) and the safety factor profile. In this work, a novel approach to simultaneously controlling beta(N) and the value of the safety factor on the magnetic axis, q(0), through manipulation of the plasma boundary shape and total beam power, is proposed. Simulations of the proposed scheme show promising results and motivate future experimental implementation and eventual integration into a more complex current profile control scheme planned to include actuation of individual beam powers, density, and loop voltage. As part of this work, a flexible framework for closed loop simulations within the high-fidelity code TRANSP was developed. The framework, used here to identify control-design-oriented models and to tune and test the proposed controller, exploits many of the predictive capabilities of TRANSP and provides a means for performing control calculations based on user-supplied data (controller matrices, target waveforms, etc). The flexible framework should enable high-fidelity testing of a variety of control algorithms, thereby reducing the amount of expensive experimental time needed to implement new control algorithms on NSTX-U and other devices.

引用

页数：15

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