Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors

被引：39

作者：

Martins, R. ^{[1
]}

Barquinha, P. ^{[1
]}

Pereira, L. ^{[1
]}

Ferreira, I. ^{[1
]}

Fortunato, E. ^{[1
]}

机构：

[1] Univ Nova Lisboa & CEMOP UNINOVA, Fac Sci, CENIMAT 13N, Dept Mat Sci, P-2829516 Caparica, Portugal

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 89卷 / 01期

关键词：

D O I：

10.1007/s00339-007-4038-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper aims to discuss the effect of order and disorder on the electrical performances of covalent silicon semiconductors and ZnO based ionic oxide semiconductors used as active channel layers in thin film transistors. The effect of disorder on covalent semiconductors directly affects their electrical transport properties due to the asymmetric behaviour of sp states, while in ionic oxide semiconductors it is found that this effect is small due to the fact that angular disorder has no effect on the spherical symmetry of s states. To this we must add that the mobility of carriers in both systems is quite different, being also affected by electron-phonon interactions (weak in silicon and strong in ionic oxides leading to formation of polarons). Besides, the impurity doping effect and the presence of vacancies in disordered silicon and in ionic oxides behave differently, which will influence the thin film properties and so, the performances of the devices produced.

引用

页码：37 / 42

页数：6

共 42 条

[1] Improved performance of amorphous silicon thin film transistors by cyanide treatment [J].