Optical investigations and exciton localization in high quality Zn1-xMgxO-ZnO single quantum wells

被引：24

作者：

Al-Suleiman, M. ^{[1
]}

El-Shaer, A. ^{[1
]}

Bakin, A. ^{[1
]}

Wehmann, H.-H. ^{[1
]}

Waag, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2773760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work investigates the photoluminescence properties of Zn1-xMgxO-ZnO single quantum wells, which have been fabricated by molecular-beam epitaxy. With increasing temperature from 13 to 300 K the single quantum well-related emission peaks exhibit an irregular S-shaped (redshift-blueshift-redshift) behavior, which is in contrast with that ascribed to band gap shrinkage (redshift). In order to clarify the origin of this behavior, the temperature dependence of the integral photoluminescence intensity of the quantum well emission was studied and the relevant activation energies were calculated and correlated to its full width at half maximum, band offsets, and monolayer fluctuations.

引用

页数：3

共 18 条

[1] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Gainer, GH ;

Fischer, AJ ;

Song, JJ ;

Keller, S ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1370-1372

[2] EFFECTS OF CONFINED DONOR STATES ON THE OPTICAL AND TRANSPORT-PROPERTIES OF ORDERED GAINP2 ALLOYS [J].

DRIESSEN, FAJM ;

BAUHUIS, GJ ;

OLSTHOORN, SM ;

GILING, LJ .

PHYSICAL REVIEW B, 1993, 48 (11) :7889-7896

[3] CBE growth of high-quality ZnO epitaxial layers [J].

El-Shaer, A ;

Bakin, A ;

Mofor, AC ;

Bläsing, J ;

Krost, A ;

Stoimenos, J ;

Pécz, B ;

Kreye, M ;

Heuken, M ;

Waag, A .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04) :768-772

[4] PHOTOLUMINESCENCE OF MOLECULAR-BEAM EPITAXIAL GROWN AL0.48IN0.52AS [J].

FERGUSON, IT ;

CHENG, TS ;

TORRES, CMS ;

MURRAY, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :1319-1327

[5]

KLINGSHIRN C, 2007, SEMICONDUCTOR OPTICS, P378

[6] Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells [J].

Makino, T ;

Tuan, NT ;

Sun, HD ;

Chia, CH ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Tamura, K ;

Suemoto, T ;

Akiyama, H ;

Baba, M ;

Saito, S ;

Tomita, T ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2001, 78 (14) :1979-1981

[7] PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF AL0.48IN0.52AS [J].

OLSTHOORN, SM ;

DRIESSEN, FAJM ;

EIJKELENBOOM, APAM ;

GILING, LJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7798-7803

[8]

Petri W, 1998, J CRYST GROWTH, V184, P320

[9]

Reznitsky A, 2002, INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, P280

[10] Temperature dependence of excitonic absorption spectra in ZnO/Zn0.88Mg0.12O multiquantum wells grown on lattice-matched substrates [J].