Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation -: art. no. 032907

We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles. (c) 2006 American Institute of Physics.