Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy

被引:39
作者
Jeon, TI [1 ]
Grischkowsky, D
Mukherjee, AK
Menon, R
机构
[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA
[2] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA
[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[4] Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea
关键词
D O I
10.1063/1.1427754
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using THz time-domain spectroscopy (THz-TDS), we have measured the absorption and dispersion of 7.5/(Omega cm) conducting poly-3-methylthiophene film from low frequencies up to 4 THz. From these measurements the complex conductance that increases with increasing frequency was obtained over this frequency range. The results do not follow simple Drude theory and are not comparable with normal metal and semiconductors; the results were well fit by the localization-modified Drude theory. (C) 2001 American Institute of Physics.
引用
收藏
页码:4142 / 4144
页数:3
相关论文
共 13 条
[11]   METAL-INSULATOR TRANSITIONS IN NON-CRYSTALLINE SYSTEMS [J].
MOTT, NF .
ADVANCES IN PHYSICS, 1985, 34 (03) :329-401
[12]   CARRIER DYNAMICS OF ELECTRONS AND HOLES IN MODERATELY DOPED SILICON [J].
VANEXTER, M ;
GRISCHKOWSKY, D .
PHYSICAL REVIEW B, 1990, 41 (17) :12140-12149
[13]   OPTICAL AND ELECTRONIC-PROPERTIES OF DOPED SILICON FROM 0.1 TO 2 THZ [J].
VANEXTER, M ;
GRISCHKOWSKY, D .
APPLIED PHYSICS LETTERS, 1990, 56 (17) :1694-1696