Local structural properties in the terahertz semiconductor Zn1-xCdxTe

被引：8

作者：

Han, SW ^{[1
]}

机构：

[1] Lawrence Berkeley Lab, Chem Sci Div, Berkeley, CA 94720 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 10期

关键词：

ZnCdTe; terahertz; local structure; disorder; XAFS; semiconductor;

D O I：

10.1143/JJAP.42.6303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local structural properties of wide-band-gap semiconductors, Zn1-xCdxTe (ZCT) crystals (x = 0-0.25), were studied using X-ray absorption fine structure (XAFS) measurements at the Te L-1 - and Zn K-edges. A previous study by Liu et al. (1)) reported that ZCT emits or absorbs terahertz (THz) signals with a best efficiency when x similar or equal to 0.05. The XAFS studies show that the disorder and the bond length of Te-Zn pairs have maximum values at about x = 0.05. We discuss that these structural transitions are relevant to the efficiency of THz emission and absorption in ZCT crystals. We also find that the distance of Te-Cd pairs is at least similar to0.2 Angstrom longer than that of Te-Zn pairs and that Cd doping causes disorder/distortion in both Te and Zn sites in the crystals.

引用

页码：6303 / 6307

页数：5

共 23 条

[1] Relativistic calculations of spin-dependent x-ray-absorption spectra [J].

Ankudinov, AL ;

Rehr, JJ .

PHYSICAL REVIEW B, 1997, 56 (04) :R1712-R1715

[2] Measurements of the THz absorption and dispersion of ZnTe and their relevance to the electro-optic detection of THz radiation [J].

Gallot, G ;

Zhang, JQ ;

McGowan, RW ;

Jeon, TI ;

Grischkowsky, D .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3450-3452

[3] Photoluminescence related to the interaction between carriers and structural defects in ZnTe crystals [J].

García, JA ;

Remón, A ;

Muñoz, V ;

Triboulet, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9A) :5123-5127

[4]

Han SM, UNPUB

[5] Local structure in the stripe phase of La1.6-xSrxNd0.4CuO4 -: art. no. 094101 [J].

Han, SW ;

Stern, EA ;

Haskel, D ;

Moodenbaugh, AR .

PHYSICAL REVIEW B, 2002, 66 (09) :941011-9410111

[6] A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide [J].

Hurle, DTJ .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :6957-7022

[7] DEFECT BAND BEHAVIOR IN P-CD0.96ZN0.04TE BY HYDROGEN PASSIVATION [J].

KIM, MD ;

KANG, TW ;

KIM, JM ;

KIM, HK ;

JEOUNG, YT ;

KIM, TW .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :4077-4079

[8] Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory [J].

Leitenstorfer, A ;

Hunsche, S ;

Shah, J ;

Nuss, MC ;

Knox, WH .

APPLIED PHYSICS LETTERS, 1999, 74 (11) :1516-1518

[9] Study of ZnCdTe crystals as terahertz wave emitters and detectors [J].

Liu, K ;

Kang, HS ;

Kim, TK ;

Zhang, XC .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4115-4117

[10] A wideband coherent terahertz spectroscopy system using optical rectification and electro-optic sampling [J].

Nahata, A ;

Weling, AS ;

Heinz, TF .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2321-2323

← 1 2 3 →