DEFECT BAND BEHAVIOR IN P-CD0.96ZN0.04TE BY HYDROGEN PASSIVATION

被引：11

作者：

KIM, MD

KANG, TW

KIM, JM

KIM, HK

JEOUNG, YT

KIM, TW

机构：

[1] DONGGUK UNIV,DEPT PHYS,SEOUL 100715,SOUTH KOREA

[2] AGCY DEF DEV,DAEJON 300600,SOUTH KOREA

[3] KWANGWOON UNIV,DEPT PHYS,SEOUL 139701,SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04. Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500-degrees-C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA-degrees) and to the donor-acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA-degrees) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400-degrees-C due to their thermal energy.

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页码：4077 / 4079

页数：3

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