PHOTOLUMINESCENCE ENHANCEMENT IN POST-GROWTH HYDROGENATED GA1-XALXAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.32) AND GAAS/GAALAS MULTILAYER STRUCTURES

被引：46

作者：

PAVESI, L ^{[1
]}

MARTELLI, F ^{[1
]}

MARTIN, D ^{[1
]}

REINHART, FK ^{[1
]}

机构：

[1] FDN UGO BORDONI,I-00142 ROME,ITALY

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 16期

关键词：

D O I：

10.1063/1.101339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1522 / 1524

页数：3

共 14 条

[1] DLTS AND PHOTOLUMINESCENCE OF MBE GAAS GROWN IN THE PRESENCE OF HYDROGEN
BOSACCHI, A
FRANCHI, S
GHEZZI, C
GOMBIA, E
GUZZI, M
STAEHLI, JL
ALLEGRI, P
AVANZINI, V
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 181 - 187
[2] DIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XAS
BOSIO, C
STAEHLI, JL
GUZZI, M
BURRI, G
LOGAN, RA
[J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3263 - 3268
[3] BOSIO C, 1987, THESIS U MILAN
[4] HYDROGEN IN SI - DIFFUSION AND SHALLOW IMPURITY DEACTIVATION
CAPIZZI, M
MITTIGA, A
[J]. PHYSICA B & C, 1987, 146 (1-2): : 19 - 29
[5] CAPIZZI M, 1988, IN PRESS 4TH P INT C
[6] INFLUENCE OF TRANSPORT-PROPERTIES ON THE EXCITATION-SPECTRA OF GAAS/ALXGA1-XAS SUPERLATTICES AND BULK LAYERS
CHOMETTE, A
LAMBERT, B
CLERJAUD, B
CLEROT, F
LIU, HW
REGRENY, A
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) : 351 - 355
[7] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE
DAUTREMONTSMITH, WC
NABITY, JC
SWAMINATHAN, V
STAVOLA, M
CHEVALLIER, J
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1098 - 1100
[8] RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES
GOBEL, EO
JUNG, H
KUHL, J
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (17) : 1588 - 1591
[9] ELECTRON-MOBILITY STUDIES OF THE DONOR NEUTRALIZATION BY ATOMIC-HYDROGEN IN GAAS DOPED WITH SILICON
JALIL, A
CHEVALLIER, J
AZOULAY, R
MIRCEA, A
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3774 - 3777
[10] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS
JOHNSON, NM
BURNHAM, RD
STREET, RA
THORNTON, RL
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1102 - 1105

← 1 2 →