PHYSICAL-PROPERTIES OF CDTE GROWN ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

LIN, MS ^{[1
]}

CHOU, RL ^{[1
]}

CHOU, KS ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT CHEM ENGN,HSINCHU 300,TAIWAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90339-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：475 / 479

页数：5

共 12 条

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[5]

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[7] EFFECTS OF CD-VAPOR AND TE-VAPOR HEAT-TREATMENTS ON THE LUMINESCENCE OF SOLUTION-GROWN CDTE-IN [J].

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ZANIO, KR .

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[8] PHOTO-LUMINESCENCE AND RECOMBINATION CENTERS IN PHOSPHORUS-DOPED AND UNDOPED CDTE HEAT-TREATED UNDER COMPONENT VAPOR-PRESSURES [J].

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[9] CHARACTERIZATION AND ANNEALING BEHAVIOR OF DEEP LEVELS IN CDTE EPITAXIAL LAYERS [J].

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[10]

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