CHARACTERISTICS OF CDTE GROWN ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：35

作者：

CHOU, RL ^{[1
]}

LIN, MS ^{[1
]}

CHOU, KS ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT CHEM ENGN,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.96494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：523 / 525

页数：3

共 11 条

[1] HIGH-QUALITY EPITAXIAL-FILMS OF CDTE ON SAPPHIRE
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[2] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDTE
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[3] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL
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SCHETZINA, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 76 - 82
[4] METAL-ORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5087 - 5089
[5] GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY
LO, Y
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MYERS, TH
SCHETZINA, JF
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4238 - 4240
[6] MANASEVIT HM, 1971, J ELECTROCHEM SOC, V118, P645
[7] THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS
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IRVINE, SJC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 178 - 181
[8] EFFECTS OF CD-VAPOR AND TE-VAPOR HEAT-TREATMENTS ON THE LUMINESCENCE OF SOLUTION-GROWN CDTE-IN
NORRIS, CB
ZANIO, KR
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6347 - 6359
[9] STUDY OF MERCURY CADMIUM TELLURIDE EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
RACCAH, PM
GARLAND, JW
ZHANG, Z
LEE, U
UGUR, S
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GHANDI, SK
BHAT, I
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2014 - 2017
[10] TAGUCHI T, 1973, JPN J APPL PHYS, V12, P1558, DOI 10.1143/JJAP.12.1558

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