Effect of LaNiO3 electrode on electrical properties of RF-magnetron-sputtered Pb(Zr,Ti)O3 ferroelectric thin films

被引:10
作者
Chao, GC [1 ]
Wu, JM [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3A期
关键词
Pb(Zr; Ti)O-3; LaNiO3; electrode; electrical properties; sputtering; ferroelectric thin film;
D O I
10.1143/JJAP.40.1306
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of Pb(Zr,Ti)O-3 (PZT) were rf-magnetron sputtered on both (100)-textured LaNiO3 electrode and Pt electrode. In the presence of the (100)-textured LaNiO3 electrode, a pure perovskite phase of (100) preferred orientation could be obtained at substrate temperatures as low as 450 degreesC. In contrast, the residual pyrochlore phase was present in films deposited on the Pt electrode. In addition to lowering the fabricating temperature, the LaNiO3 electrode increases the relative dielectric constant and markedly decreases the coercive field of PZT films. Most beneficially, the LaNiO3 electrode not only improves the fatigue resistance but also reduces the leakage current of PZT films.
引用
收藏
页码:1306 / 1309
页数:4
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