Reliability of gate oxide grown on nitrogen-implanted Si substrates

Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen-implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability. (C) 1996 American Institute of Physics.