SIMULTANEOUS GROWTH OF DIFFERENT THICKNESS GATE OXIDES IN SILICON CMOS PROCESSING

被引：28

作者：

DOYLE, B ^{[1
]}

SOLEIMANI, HR ^{[1
]}

PHILIPOSSIAN, A ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 07期

关键词：

D O I：

10.1109/55.388714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is proposed that allows the growth of gate oxides of different thicknesses on a single wafer. The method does not require masking the gate oxide during oxidation with its inherent risk to the oxide quality, but rather relies on the implant of nitrogen into the silicon wafer before both oxide growth and preoxidation cleans. This implant is performed at the same step as the normal threshold voltage implants, avoiding possible contamination. Using Nitrogen implant doses of the order of 3 x 10(14)-3 x 10(15) cm(-2), it is shown that it is possible to grow oxides of 30-70 Angstrom, for a process with a nominal oxide thickness of 90 Angstrom.

引用

页码：301 / 302

页数：2

共 9 条

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