EFFECTS OF N2O ANNEAL AND REOXIDATION ON THERMAL OXIDE CHARACTERISTICS

被引:58
作者
LIU, ZH [1 ]
WANN, HJ [1 ]
KO, PK [1 ]
HU, CM [1 ]
CHENG, YC [1 ]
机构
[1] CITY POLYTECH HONG KONG,HONG KONG,HONG KONG
关键词
D O I
10.1109/55.192772
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides.
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页码:402 / 404
页数:3
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