TRAPPING EFFECTS IN THIN OXYNITRIDE LAYERS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：12

作者：

FAIGON, A

SHAPPIR, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.336233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4633 / 4637

页数：5

共 25 条

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