CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON

被引：88

作者：

CHANG, ST ^{[1
]}

JOHNSON, NM ^{[1
]}

LYON, SA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：316 / 318

页数：3

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