ANALYSIS OF VELOCITY SATURATION AND OTHER EFFECTS ON SHORT-CHANNEL MOS-TRANSISTOR CAPACITANCES

被引：16

作者：

IWAI, H ^{[1
]}

PINTO, MR ^{[1
]}

RAFFERTY, CS ^{[1
]}

ORISTIAN, JE ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,FAC ELECT ENGN,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1109/TCAD.1987.1270261

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：173 / 184

页数：12

共 34 条

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