A SCALEABLE TECHNIQUE FOR THE MEASUREMENT OF INTRINSIC MOS CAPACITANCE WITH ATTO-FARAD RESOLUTION

被引：13

作者：

IWAI, H ^{[1
]}

ORISTIAN, JE ^{[1
]}

WALKER, JT ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：344 / 356

页数：13

相关论文

共 63 条

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW
AKERS, LA
SANCHEZ, JJ
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641
[2] ATKINSON KE, 1978, INTRO NUMERICAL ANAL, P43
[3] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS
BATEMAN, IM
ARMSTRONG, GA
MAGOWAN, JA
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 539 - 550
[4] AN 8-CHANNEL 8 BIT MICROPROCESSOR COMPATIBLE NMOS D-A CONVERTER WITH PROGRAMMABLE SCALING
BIENSTMAN, LA
DEMAN, HJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (06) : 1051 - 1059
[5] BREWS JR, 1981, SILICON INTEGRATED A, P60
[6] BRIDGE AND VAN-DER-PAUW SHEET RESISTORS FOR CHARACTERIZING LINE-WIDTH OF CONDUCTING LAYERS
BUEHLER, MG
GRANT, SD
THURBER, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 650 - 654
[7] BURNS JR, 1969, RCA REV, V30, P15
[8] COBBOLD RSC, 1970, THEORY APPLICATIONS, P243
[9] COBBOLD RSC, 1970, THEORY APPLICATIONS, P272
[10] P-CHANNEL VERSUS N-CHANNEL IN MOS-ICS OF SUB-MICRON CHANNEL LENGTHS
DANG, LM
IWAI, H
NISHI, Y
TAGUCHI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 107 - 112

← 1 2 3 4 5 6 7 →