BRIDGE AND VAN-DER-PAUW SHEET RESISTORS FOR CHARACTERIZING LINE-WIDTH OF CONDUCTING LAYERS

被引:99
作者
BUEHLER, MG
GRANT, SD
THURBER, WR
机构
[1] National Bureau of Standards, Electronic Technology Division, Washington
关键词
cross-bridge structure; diffused layer; line width; process control; sheet resistance;
D O I
10.1149/1.2131517
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
It is shown that the line width of conducting layers can be computed from simple d-c electrical measurements made on bridge and van der Pauw shaped test structures. A compact six-contact, cross-bridge sheet resistor test structure was developed to make this measurement directly. Line widths measured on boron nitride diffused layers indicate that the method is sensitive to width variations of the order of ±0.1 μm (±4 μin.). © 1978, The Electrochemical Society, Inc. All rights reserved.
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页码:650 / 654
页数:5
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