Origin of the Insulating Phase and First-Order Metal-Insulator Transition in 1T-TaS2

被引:164
作者
Lee, Sung-Hoon [1 ,2 ]
Goh, Jung Suk [3 ]
Cho, Doohee [3 ]
机构
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 17104, South Korea
[2] Kyung Hee Univ, Inst Nat Sci, Yongin 17104, South Korea
[3] Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
CHARGE-DENSITY WAVES; THERMAL-EXPANSION; STATE;
D O I
10.1103/PhysRevLett.122.106404
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using density functional theory calculations, we investigate the origin of the insulating phase and metal-insulator transition (MIT) in octahedral tantalum disulfide (1T-TaS2), a layered van der Waals material with a prominent two-dimensional (2D) charge density wave (CDW) order. We show that the MIT is driven not by the 2D order itself, but by the vertical ordering of the 2D CDWs or the 3D CD Worder. We identify two exceptionally stable 3D CDW configurations; one is insulating and the other is metallic. The competition and mixing of the two CDW configurations account for many mysterious features of the MIT in 1T-TaS2, including the pressure- and doping-induced transitions and the hysteresis behavior. The present results emphasize that interlayer electronic ordering can play an important role in electronic phase transitions in layered materials.
引用
收藏
页数:6
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