Enhanced stability of deuterium in silicon

被引：41

作者：

Biswas, R ^{[1
]}

Li, YP

Pan, BC

机构：

[1] Iowa State Univ, Dept Phys & Astron, Ctr Microelect Res, Ames, IA 50011 USA

[2] Iowa State Univ, Ames Lab, USDOE, Ames, IA 50011 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tight-binding molecular dynamics has been used to simulate vibrationally excited Si-H and Si-D modes. Simulations find that vibrationally excited Si-D bending modes decay much more rapidly than SI-H bending modes, re-suiting in SiD bonds having much higher stability than SiH bonds. This provides a viable mechanism for reduced degradation in deuterated metal-oxide-semiconductor transistors and deuterated amorphous silicon devices. (C) 1998 American Institute of Physics.

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收藏

页码：3500 / 3502

页数：3

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