Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

被引:17
作者
Bour, DP [1 ]
Kneissl, M [1 ]
Romano, LT [1 ]
McCluskey, MD [1 ]
Van de Walle, CG [1 ]
Krusor, BS [1 ]
Donaldson, RM [1 ]
Walker, J [1 ]
Dunnrowicz, CJ [1 ]
Johnson, NM [1 ]
机构
[1] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA
关键词
CVD; nitrogen compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor lasers; semiconductor materials;
D O I
10.1109/2944.704108
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching, The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm, The lowest threshold current density obtained was 20 kA/cm(2) with maximum output powers of 50 mW, Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length, Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm(-1).
引用
收藏
页码:498 / 504
页数:7
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