Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

被引：17

作者：

Bour, DP ^{[1
]}

Kneissl, M ^{[1
]}

Romano, LT ^{[1
]}

McCluskey, MD ^{[1
]}

Van de Walle, CG ^{[1
]}

Krusor, BS ^{[1
]}

Donaldson, RM ^{[1
]}

Walker, J ^{[1
]}

Dunnrowicz, CJ ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 03期

关键词：

CVD; nitrogen compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor lasers; semiconductor materials;

D O I：

10.1109/2944.704108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching, The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm, The lowest threshold current density obtained was 20 kA/cm(2) with maximum output powers of 50 mW, Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length, Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm(-1).

引用

页码：498 / 504

页数：7

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