Electronic sructure of the √3x√3-α and 3x3 periodicities of Sn/Ge(111)

被引：87

作者：

Uhrberg, RIG ^{[1
]}

Balasubramanian, T ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.81.2108

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Angle-resolved photoemission shows that the root 3 x root 3 and the 3 x 3 surfaces have almost identical surface band structures with two dispersive bands, one of which crosses the Fermi level. The close resemblance between the electronic structures strongly points to a common atomic structure which is further supported by the two Sn 4d core-level components observed for both the root 3 x root 3 and the 3 x 3 surfaces. The existence of two surface state bands on the root 3 x root 3 surface calls for there evaluation of the T-4 model for Sn/Ge(111) and other related group IV adatom surfaces.

引用

页码：2108 / 2111

页数：4

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