Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering

被引:66
作者
Gourbilleau, F
Dufour, C
Levalois, M
Vicens, J
Rizk, R
Sada, C
Enrichi, F
Battaglin, G
机构
[1] Inst Sci Mat & Rayonnement, CNRS 2149, LERMAT, F-14050 Caen, France
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] INFM, I-35131 Padua, Italy
[4] Univ Venice, Dipartimento Chim Fis, I-30123 Venice, Italy
[5] INFM, I-30123 Venice, Italy
关键词
D O I
10.1063/1.1604479
中图分类号
O59 [应用物理学];
学科分类号
摘要
Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural and room-temperature photoluminescence properties were investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role in the microstructure and distribution of the Si nanograins formed after annealing. Concomitant density increase and size decrease of these nanograins mostly amorphous were noticed upon increasing the hydrogen partial pressure in the plasma. This was accompanied by a systematic enhancement of the Er emission indicating that both crystallized and amorphous silicon nanoparticles are similarly efficient sensitizers for Er emission. The lifetime of the latter was found as high as 5-6 ms. (C) 2003 American Institute of Physics.
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页码:3869 / 3874
页数:6
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