EBIC study of recombination activity of oxygen precipitation related defects in Si

被引：26

作者：

Seifert, W ^{[1
]}

Kittler, M ^{[1
]}

Vanhellemont, J ^{[1
]}

机构：

[1] IMEC,B-3001 LOUVAIN,BELGIUM

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期

关键词：

oxygen precipitates; recombination sites; silicon;

D O I：

10.1016/S0921-5107(96)01718-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe an electron beam induced current (EBIC) study of the recombination activity of oxygen precipitation related defects (ORD) in n- and p-type Si. ORD in as-processed samples exhibit low activity at 300 K, becoming strongly active upon cooling to 80 K. This indicates that shallow levels control their recombination properties. A clear correlation exists between minority carrier diffusion length and density and recombination activity of ORD. Arrhenius-type analyses of the data, based on Shockley-Read-Hall theory, yield activation energies well below 100 meV. Defects in n- and p-type material behave in the same way. Contamination with iron gives rise to a dramatic increase of ORD activity at 300 K, resulting in a temperature behaviour characteristic of deep centres. Dislocations surrounding the precipitates appear to be the main recombination sites.

引用

页码：260 / 264

页数：5

共 12 条

[1]

Bender H., 1994, Handbook on Semiconductors, V3, P1637

[2] Lifetime identification of thermal oxidation process induced contamination in silicon wafers [J].