2 TYPES OF ELECTRON-BEAM-INDUCED CURRENT BEHAVIOR OF MISFIT DISLOCATIONS IN SI(GE) - EXPERIMENTAL-OBSERVATIONS AND MODELING

The paper reports measurements of electron-beam-induced current contrast c vs. temperature T and beam current I(b) for two misfit dislocations in a p-type Si/SiGe sample. It is demonstrated that the different behaviour observed can be explained on the basis of the Shockley-Read-Hall recombination theory. The activity of the dislocation with dc(T)/dT>0 is controlled by deep centres while that of the other dislocation having dc(T)/dT<0 indicates shallow centres lying about 0.075 eV from the band edge.