ON THE ORIGIN OF EBIC DEFECT CONTRAST IN SILICON - A REFLECTION ON INJECTION AND TEMPERATURE-DEPENDENT INVESTIGATIONS

被引：49

作者：

KITTLER, M

SEIFERT, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Available data about the dependence of EBIC contrast c of extended defects on sample temperature T and beam current lb are analysed. Two main types of behaviour are distinguished characterized by negative C(I(b))/POSitive c(T) slope and positive C(I(b))/negative c(T) slope, respectively. The former is attributed to defect charging (deep states) and the latter to shallow centres. Further, chemomechanical polishing is shown to influence the defect recombination activity.

引用

页码：687 / 693

页数：7

共 30 条

[1]

ALEXANDER H, 1991, MATERIALS SCI TECHNO, V4, pCH6

[2]

BONDARENKO IE, 1990, DEFECT CONTROL SEMIC, P1443

[3]

CAVALLINI A, 1992, MATER RES SOC SYMP P, V262, P223, DOI 10.1557/PROC-262-223

[4] A THEORETICAL-STUDY OF THE CHARGE COLLECTION CONTRAST OF LOCALIZED SEMICONDUCTOR DEFECTS WITH ARBITRARY RECOMBINATION ACTIVITY [J].