NUMERICAL-ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF EBIC AND CL CONTRASTS

被引：24

作者：

ECKSTEIN, M

HABERMEIER, HU

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C6期

关键词：

D O I：

10.1051/jp4:1991604

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using simultaneous EBIC and CL measurements it is possible to extract the temperature dependence of the recombination efficiency from the temperature dependence of the defect contrasts, which in GaAs are dominated by the temperature dependence of the minority carrier diffusion length. Our measurements on dislocations in n-type GaAs indicate an electronic level of about 30meV away from a band edge related to the dislocations and give evidence for an electric field associated with the dislocation.

引用

收藏

页码：23 / 28

页数：6

相关论文

共 18 条

[1] A COMPUTERIZED SIGNAL ACQUISITION-SYSTEM FOR THE QUANTITATIVE-EVALUATION OF EBIC AND CL DATA IN A SEM [J].

BODE, M ;

JAKUBOWICZ, A ;

HABERMEIER, HU .

SCANNING, 1988, 10 (05) :169-176

[2]

BODE M, 1988, THESIS U STUTTGART

[3]

ECKSTEIN M, IN PRESS

[4]

ECKSTEIN M, 1990, THESIS U STUTTGART

[5]

ECKSTEIN M, 1990, SPIE, V1284, P228

[6] ELECTRON-BEAM INDUCED CURRENT VERSUS TEMPERATURE INVESTIGATIONS OF LOCALIZED DISLOCATIONS IN HEAT-TREATED CZOCHRALSKI SILICON [J].

JAKUBOWICZ, A ;

HABERMEIER, HU ;

EISENBEISS, A ;

KASS, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02) :635-641

[7] THEORY OF CATHODOLUMINESCENCE CONTRAST FROM LOCALIZED DEFECTS IN SEMICONDUCTORS [J].

JAKUBOWICZ, A .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2205-2209

[8] ON THE THEORY OF ELECTRON-BEAM-INDUCED CURRENT CONTRAST FROM POINTLIKE DEFECTS IN SEMICONDUCTORS [J].

JAKUBOWICZ, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1194-1199

[9] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J].

KIMERLING, LC ;

LEAMY, HJ ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :217-219

[10] THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON [J].

OURMAZD, A ;

WILSHAW, PR ;

BOOKER, GR .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :289-295