ELECTRON-BEAM INDUCED CURRENT VERSUS TEMPERATURE INVESTIGATIONS OF LOCALIZED DISLOCATIONS IN HEAT-TREATED CZOCHRALSKI SILICON

被引：13

作者：

JAKUBOWICZ, A ^{[1
]}

HABERMEIER, HU ^{[1
]}

EISENBEISS, A ^{[1
]}

KASS, D ^{[1
]}

机构：

[1] JOHANNES KEPLER UNIV,INST EXPTL PHYS,A-4040 LINZ,AUSTRIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 104卷 / 02期

关键词：

D O I：

10.1002/pssa.2211040214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：635 / 641

页数：7

共 12 条

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[6] ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF OXYGEN PRECIPITATES IN SILICON
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HABERMEIER, HU
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1407 - 1409
[7] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON
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LEAMY, HJ
PATEL, JR
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219
[8] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784
[9] OURMAZD A, 1981, CRYST RES TECHNOL, V16, P137
[10] PASEMANN L, 1984, PHYS STATUS SOLIDI A, V84, P133, DOI 10.1002/pssa.2210840116