ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF OXYGEN PRECIPITATES IN SILICON

被引：11

作者：

JAKUBOWICZ, A

HABERMEIER, HU

机构：

来源：

关键词：

D O I：

10.1063/1.336091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1407 / 1409

页数：3

共 8 条

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[3] FOLL H, 1977, SEMICONDUCTOR SILICO, P740
[4] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON
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LEAMY, HJ
PATEL, JR
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219
[5] SEM OBSERVATION OF DOPANT STRIAE IN SILICON
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FERRIS, SD
KIMERLING, LC
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 301 - 307
[6] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY
LEAMY, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : R51 - R80
[7] PATEL JR, 1977, SEMICONDUCTOR SILICO, P521
[8] TICE WK, 1981, DEFECTS SEMICONDUCTO, V2, P367