CLASSIFICATION OF MACROSCOPIC DEFECTS CONTAINED IN P-TYPE EFG RIBBON SILICON

被引：8

作者：

HO, CT

SANDSTROM, DB

DUBE, CE

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 05期

关键词：

D O I：

10.1016/0038-1101(86)90070-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：495 / 503

页数：9

共 22 条

[1]

Ast D. G., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P167

[2] IMPROVED SPATIAL-RESOLUTION DIFFUSION LENGTH MEASUREMENTS IN IMPERFECT SILICON [J].

BELL, RO ;

HANOKA, JI .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1741-1744

[3] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1955, 100 (02) :523-524

[4] RECOMBINATION MECHANISMS [J].

BONCH-BRUEVICH, VL ;

LANDSBERG, EG .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+

[5] LASER SATURATION OF PHOTOCONDUCTIVITY AND DETERMINATION OF IMPERFECTION PARAMETERS IN SENSITIVE PHOTOCONDUCTORS [J].

BUBE, RH ;

HO, CT .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4132-&

[6]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P344

[7]

DONOLATO C, 1978, OPTIK, V52, P19

[8]

DUBE CE, UNPUB

[9] TRAP SATURATION IN SILICON SOLAR CELLS [J].

FABRE, E ;

MAUTREF, M ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :239-241

[10] RECOMBINATION AT DISLOCATIONS [J].

FIGIELSKI, T .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1403-1412

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