IMPROVED SPATIAL-RESOLUTION DIFFUSION LENGTH MEASUREMENTS IN IMPERFECT SILICON

被引：10

作者：

BELL, RO

HANOKA, JI

机构：

来源：

关键词：

D O I：

10.1063/1.331643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1741 / 1744

页数：4

共 12 条

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JOHANSEN, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 611 - 620
[3] ADVANCES IN THE ELECTRICAL ASSESSMENT OF SEMICONDUCTORS USING THE SCANNING ELECTRON-MICROSCOPE
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DIMITRIADIS, CA
[J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 275 - 290
[4] DONOLATO C, 1978, OPTIK, V52, P19
[5] SPATIAL-RESOLUTION OF SEM-EBIC IMAGES
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[J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 797 - 799
[6] HANOKA J, 1979, SOL CELLS, V1, P123
[7] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS
HANOKA, JI
BELL, RO
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380
[8] HANOKA JI, 1980, S EL OPT PROP POL IM, P76
[9] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS
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OKAYAMA, S
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) : 43 - &
[10] GROWTH OF EFG SILICON RIBBONS
RAVI, KV
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) : 1 - 16